Emitters Efficiency, temperature resistance and cost are the three major factors for choosing a TPV emitter. Efficiency is determined by energy absorbed relative to incoming radiation. High temperature operation is crucial because efficiency increases with operating temperature. As emitter temperature increases, black-body radiation shifts to shorter wavelengths, allowing for more efficient absorption by photovoltaic cells.
Polycrystalline silicon carbide Polycrystalline
silicon carbide (SiC) is the most commonly used emitter for burner TPVs. SiC is thermally stable to ~1700 °C. However, SiC radiates much of its energy in the long wavelength regime, far lower in energy than even the narrowest bandgap photovoltaic. Such radiation is not converted into electrical energy. However, non-absorbing selective filters in front of the PV, or mirrors deposited on the back side of the PV can be used to reflect the long wavelengths back to the emitter, thereby recycling the unconverted energy. In addition, polycrystalline SiC is inexpensive.
Tungsten Tungsten is the most common
refractory metal that can be used as a selective emitter. It has higher emissivity in the visible and near-IR range of 0.45 to 0.47 and a low emissivity of 0.1 to 0.2 in the IR region. The emitter is usually in the shape of a cylinder with a sealed bottom, which can be considered a cavity. The emitter is attached to the back of a thermal absorber such as SiC and maintains the same temperature. Emission occurs in the visible and near IR range, which can be readily converted by the PV to electrical energy. However, compared to other metals, tungsten oxidizes more easily.
Rare-earth oxides Rare-earth oxides such as
ytterbium oxide (Yb2O3) and
erbium oxide (Er2O3) are the most commonly used selective emitters. These oxides emit a narrow band of wavelengths in the near-infrared region, allowing the emission spectra to be tailored to better fit the absorbance characteristics of a particular PV material. The peak of the emission spectrum occurs at 1.29 eV for Yb2O3 and 0.827 eV for Er2O3. As a result, Yb2O3 can be used a selective emitter for silicon cells and Er2O3, for GaSb or InGaAs. However, the slight mismatch between the emission peaks and band gap of the absorber costs significant efficiency. Selective emission only becomes significant at 1100 °C and increases with temperature. Below 1700 °C, selective emission of rare-earth oxides is fairly low, further decreasing efficiency. Currently, 13% efficiency has been achieved with Yb2O3 and silicon PV cells. In general selective emitters have had limited success. More often filters are used with black body emitters to pass wavelengths matched to the bandgap of the PV and reflect mismatched wavelengths back to the emitter.
Photonic crystals Photonic crystals allow precise control of electromagnetic wave properties. These materials give rise to the
photonic bandgap (PBG). In the spectral range of the PBG, electromagnetic waves cannot propagate. Engineering these materials allows some ability to tailor their emission and absorption properties, allowing for more effective emitter design. Selective emitters with peaks at higher energy than the black body peak (for practical TPV temperatures) allow for wider bandgap converters. These converters are traditionally cheaper to manufacture and less temperature sensitive. Researchers at
Sandia Labs predicted a high-efficiency (34% of light emitted converted to electricity) based on TPV emitter demonstrated using tungsten photonic crystals. However, manufacturing of these devices is difficult and not commercially feasible.
Photovoltaic cells Silicon Early TPV work focused on the use of silicon. Silicon's commercial availability, low cost, scalability and ease of manufacture makes this material an appealing candidate. However, the relatively wide bandgap of Si (1.1eV) is not ideal for use with a black body emitter at lower operating temperatures. Calculations indicate that Si PVs are only feasible at temperatures much higher than 2000 K. No emitter has been demonstrated that can operate at these temperatures. These engineering difficulties led to the pursuit of lower-bandgap semiconductor PVs. Using selective radiators with Si PVs is still a possibility. Selective radiators would eliminate high and low energy photons, reducing heat generated. Ideally, selective radiators would emit no radiation beyond the band edge of the PV converter, increasing conversion efficiency significantly. No efficient TPVs have been realized using Si PVs.
Germanium Early investigations into low bandgap semiconductors focused on
germanium (Ge). Ge has a bandgap of 0.66 eV, allowing for conversion of a much higher fraction of incoming radiation. However, poor performance was observed due to the high
effective electron mass of Ge. Compared to
III-V semiconductors, Ge's high electron effective mass leads to a high density of states in the conduction band and therefore a high intrinsic carrier concentration. As a result, Ge
diodes have fast decaying "dark" current and therefore, a low open-circuit voltage. In addition, surface passivation of germanium has proven difficult.
Gallium antimonide The
gallium antimonide (GaSb) PV cell, invented in 1989, is the basis of most PV cells in modern TPV systems. GaSb is a III-V semiconductor with the
zinc blende crystal structure. The GaSb cell is a key development owing to its narrow bandgap of 0.72 eV. This allows GaSb to respond to light at longer wavelengths than silicon solar cell, enabling higher power densities in conjunction with manmade emission sources. A solar cell with 35% efficiency was demonstrated using a bilayer PV with GaAs and GaSb, The radiative limit for efficiency of the GaSb cell in this setup is 52%.
Indium gallium arsenide antimonide Indium gallium arsenide antimonide (InGaAsSb) is a compound
III-V semiconductor. (InxGa1−xAsySb1−y) The addition of
GaAs allows for a narrower bandgap (0.5 to 0.6 eV), and therefore better absorption of long wavelengths. Specifically, the bandgap was engineered to 0.55 eV. With this bandgap, the compound achieved a photon-weighted internal quantum efficiency of 79% with a fill factor of 65% for a black body at 1100 °C. This was for a device grown on a GaSb substrate by
organometallic vapour phase epitaxy (OMVPE). Devices have been grown by
molecular beam epitaxy (MBE) and
liquid phase epitaxy (LPE). The internal
quantum efficiencies (IQE) of these devices approach 90%, while devices grown by the other two techniques exceed 95%. The largest problem with InGaAsSb cells is phase separation. Compositional inconsistencies throughout the device degrade its performance. When phase separation can be avoided, the IQE and fill factor of InGaAsSb approach theoretical limits in wavelength ranges near the bandgap energy. However, the Voc/Eg ratio is far from the ideal. However, to absorb higher wavelength photons, the bandgap may be engineered by changing the ratio of In to Ga. The range of bandgaps for this system is from about 0.4 to 1.4 eV. However, these different structures cause strain with the InP substrate. This can be controlled with graded layers of InGaAs with different compositions. This was done to develop of device with a quantum efficiency of 68% and a fill factor of 68%, grown by MBE. These IV-VI semiconductor materials can have bandgaps between 0.3 and 0.6 eV. Their symmetric band structure and lack of valence band degeneracy result in low Auger recombination rates, typically more than an order of magnitude smaller than those of comparable bandgap III-V semiconductor materials. ==Applications ==