An N-
MOSFET/
IGBT needs a significantly positive charge (
VGS > Vth) applied to the gate in order to turn on. Using only N-channel MOSFET/IGBT devices is a common cost reduction method due largely to
die size reduction (there are other benefits as well). However, using nMOS devices in place of pMOS devices means that a voltage higher than the power rail supply (V+) is needed in order to bias the transistor into linear operation (minimal
current limiting) and thus avoid significant heat loss. A bootstrap capacitor is connected from the supply rail (V+) to the output voltage. Usually the source terminal of the N-
MOSFET is connected to the
cathode of a recirculation
diode allowing for efficient management of stored energy in the typically inductive load (See
Flyback diode). Due to the charge storage characteristics of a capacitor, the bootstrap voltage will rise above (V+) providing the needed gate drive voltage. A bootstrap circuit is often used in each half-bridge of an all-N-MOSFET
H-bridge. When the low-side N-FET is on, current from the power rail (V+) flows through the bootstrap diode and charges the bootstrap capacitor through that low-side N-FET. When the low-side N-FET turns off, the low side of the bootstrap capacitor remains connected to the source of the high-side N-FET, and the capacitor discharges some of its energy driving the gate of the high-side N-FET to a voltage sufficiently above V+ to turn the high-side N-FET fully on; while the bootstrap diode blocks that above-V+ voltage from leaking back to the power rail V+. A
MOSFET/
IGBT is a voltage-controlled device which, in theory, will not have any gate current. This makes it possible to utilize the charge inside the capacitor for control purposes. However, eventually the capacitor will lose its charge due to parasitic gate current and non-ideal (i.e. finite) internal resistance, so this scheme is only used where there is a steady pulse present. This is because the pulsing action allows for the capacitor to discharge (at least partially if not completely). Most control schemes that use a bootstrap capacitor force the high side driver (N-MOSFET) off for a minimum time to allow for the capacitor to refill. This means that the
duty cycle will always need to be less than 100% to accommodate for the parasitic discharge unless the leakage is accommodated for in another manner. ==Switch-mode power supplies==