There are two recognized types of charge carriers in
semiconductors. One is
electrons, which carry a negative
electric charge. In addition, it is convenient to treat the traveling vacancies in the
valence band electron population (
holes) as a second type of charge carrier, which carry a positive charge equal in magnitude to that of an electron.
Carrier generation and recombination When an electron meets with a hole, they
recombine and these free carriers effectively vanish. The energy released can be either thermal, heating up the semiconductor (
thermal recombination, one of the sources of
waste heat in semiconductors), or released as
photons (
optical recombination, used in
LEDs and
semiconductor lasers). The recombination means an electron which has been excited from the valence band to the conduction band falls back to the empty state in the valence band, known as the holes. The holes are the empty states created in the valence band when an electron gets excited after getting some energy to pass the energy gap.
Majority and minority carriers The more abundant charge carriers are called
majority carriers, which are primarily responsible for
current transport in a piece of semiconductor. In
n-type semiconductors they are electrons, while in
p-type semiconductors they are holes. The less abundant charge carriers are called
minority carriers; in n-type semiconductors they are holes, while in p-type semiconductors they are electrons. The concentration of holes and electrons in a doped semiconductor is governed by the
mass action law. In an
intrinsic semiconductor, which does not contain any impurity, the concentrations of both types of carriers are ideally equal. If an intrinsic semiconductor is
doped with a donor impurity then the majority carriers are electrons. If the semiconductor is doped with an acceptor impurity then the majority carriers are holes. Minority carriers play an important role in
bipolar transistors and
solar cells. Their role in
field-effect transistors (FETs) is a bit more complex: for example, a
MOSFET has p-type and n-type regions. The transistor action involves the majority carriers of the
source and
drain regions, but these carriers traverse the
body of the opposite type, where they are minority carriers. However, the traversing carriers hugely outnumber their opposite type in the transfer region (in fact, the opposite type carriers are removed by an applied electric field that creates an
inversion layer), so conventionally the source and drain designation for the carriers is adopted, and FETs are called "majority carrier" devices.
Free carrier concentration Free carrier concentration is the
concentration of free carriers in a
doped semiconductor. It is similar to the carrier concentration in a metal and for the purposes of calculating currents or drift velocities can be used in the same way. Free carriers are electrons (
holes) that have been introduced into the
conduction band (
valence band) by doping. Therefore, they will not act as double carriers by leaving behind holes (electrons) in the other band. In other words, charge carriers are particles that are free to move, carrying the charge. The free carrier concentration of doped semiconductors shows a characteristic temperature dependence. == In superconductors ==