Sandia National Laboratories Fleetwood joined
Sandia National Laboratories,
Albuquerque,
New Mexico, in 1984. He was named a Distinguished Member of the technical staff in the Radiation Technology and Assurance Department in 1990. In 1997 he received R&D 100 and
IndustryWeek magazine awards for co-invention of a new type of computer memory chip based on mobile protons in Silicon dioxide (protonic nonvolatile field effect transistor memory). This chip was also recognized as
Discover magazine's 1998 Invention of the Year in computer hardware and electronics. In 2000 he was named one of the top 250 most highly cited researchers in Engineering by the Institute for Scientific Information. and
Institute for Space and Defense Electronics. His research interests are Effects of ionizing radiation on microelectronic devices and materials,
Flicker noise in semiconductors, radiation hardness assurance test methods for mission-critical equipments, radiation effects modeling and simulation and novel microelectronic materials. Fleetwood is the author of more than 600 publications on radiation effects in microelectronics, defects in semiconductor devices, and low-frequency noise. These papers have been cited more than 30,000 times (citation h factor = 93, per Google Scholar). He was named an honorary professor of the Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences in 2011. He currently serves as Senior Editor, Radiation Effects, of the IEEE Transactions on Nuclear Science and Distinguished Lectures Chair of the IEEE Nuclear and Plasma Sciences Society. == Awards and honors ==