Density functional theory (DFT) provides reliable methods for determining several forms of elastic moduli that characterise distinct features of a material's reaction to mechanical stresses. Utilize DFT software such as
VASP,
Quantum ESPRESSO, or
ABINIT. Overall, conduct tests to ensure that results are independent of computational parameters such as the density of the k-point mesh, the plane-wave cutoff energy, and the size of the simulation cell. •
Young's modulus (
E) - apply small, incremental changes in the lattice parameter along a specific axis and compute the corresponding stress response using DFT. Young's modulus is then calculated as
E=
σ/
ϵ, where
σ is the stress and
ϵ is the strain. • Initial structure: Start with a relaxed structure of the material. All atoms should be in a state of minimum energy (i.e., minimum energy state with zero forces on atoms) before any deformations are applied. • Incremental uniaxial strain: Apply small, incremental strains to the
crystal lattice along a particular axis. This strain is usually
uniaxial, meaning it stretches or compresses the lattice in one direction while keeping other dimensions constant or periodic. • Calculate stresses: For each strained configuration, run a DFT calculation to compute the resulting
stress tensor. This involves solving the Kohn-Sham equations to find the
ground state electron density and energy under the strained conditions •
Stress-strain curve: Plot the calculated stress versus the applied strain to create a stress-strain curve. The slope of the initial, linear portion of this curve gives Young's modulus. Mathematically,
Young's modulus E is calculated using the formula
E=
σ/
ϵ, where
σ is the stress and
ϵ is the strain. •
Shear modulus (
G) • Initial structure: Start with a relaxed structure of the material. All atoms should be in a state of minimum energy with no
residual forces. (i.e., minimum energy state with zero forces on atoms) before any deformations are applied. • Shear strain application: Apply small increments of shear strain to the material.
Shear strains are typically off-diagonal components in the strain tensor, affecting the shape but not the volume of the crystal cell. • Stress calculation: For each configuration with applied
shear strain, perform a DFT calculation to determine the resulting stress tensor. •
Shear stress vs.
shear strain curve: Plot the calculated shear stress against the applied shear strain for each increment. The slope of the stress-strain curve in its linear region provides the shear modulus,
G=
τ/
γ, where
τ is the shear stress and
γ is the applied shear strain. •
Bulk modulus (
K) • Initial structure: Start with a relaxed structure of the material. It's crucial that the material is fully optimized, ensuring that any changes in volume are purely due to applied pressure. • Volume changes: Incrementally change the volume of the
crystal cell, either compressing or expanding it. This is typically done by uniformly scaling the lattice parameters. • Calculate pressure: For each altered volume, perform a DFT calculation to determine the pressure required to maintain that volume. DFT allows for the calculation of stress tensors which provide a direct measure of the internal pressure. •
Pressure-volume curve: Plot the applied pressure against the resulting volume change. The bulk modulus can be calculated from the slope of this curve in the linear elastic region. The bulk modulus is defined as
K=−
VdV/
dP, where
V is the original volume,
dP is the change in pressure, and
dV is the change in volume. == See also ==