Background The
history of the transistor dates to the 1920s when several inventors attempted devices that were intended to control current in solid-state diodes and convert them into triodes. Success came after World War II, when the use of silicon and germanium crystals as radar detectors led to improvements in fabrication and theory. Scientists who had worked on radar returned to solid-state device development. With the invention of the first
transistor at
Bell Labs in 1947, the field of electronics shifted from vacuum tubes to
solid-state devices. With the small transistor at their hands, electrical engineers of the 1950s saw the possibilities of constructing far more advanced circuits. However, as the complexity of circuits grew, problems arose. The
invention of the integrated circuit by
Jack Kilby and
Robert Noyce solved this problem by making all the components and the chip out of the same block (monolith) of semiconductor material. The circuits could be made smaller, and the manufacturing process could be automated. This led to the idea of integrating all components on a single-crystal silicon wafer, which led to
small-scale integration (SSI) in the early 1960s, and then
medium-scale integration (MSI) in the late 1960s.
VLSI General Micro-electronics introduced the first commercial
MOS integrated circuit in 1964. In the early 1970s, MOS integrated circuit technology allowed the integration of more than 10,000 transistors in a single chip. This paved the way for VLSI in the 1970s and 1980s, with tens of thousands of MOS transistors on a single chip (later hundreds of thousands, then millions, and now billions). The first semiconductor chips held two transistors each. Subsequent advances added more transistors, and as a consequence, more individual functions or systems were integrated over time. The first integrated circuits held only a few devices, perhaps as many as ten
diodes,
transistors,
resistors and
capacitors, making it possible to fabricate one or more
logic gates on a single device. Now known retrospectively as
small-scale integration (SSI), improvements in technique led to devices with hundreds of logic gates, known as
medium-scale integration (MSI). Further improvements led to
large-scale integration (LSI), i.e. systems with at least a thousand logic gates. Current technology has moved far past this mark and today's
microprocessors have many millions of gates and billions of individual transistors. At one time, there was an effort to name and calibrate various levels of large-scale integration above VLSI. Terms like
ultra-large-scale integration (ULSI) were used. But the huge number of gates and transistors available on common devices has rendered such fine distinctions moot. Terms suggesting greater than VLSI levels of integration are no longer in widespread use. In 2008, billion-transistor processors became commercially available. This became more commonplace as semiconductor fabrication advanced from the then-current generation of
65 nanometer processors. Current designs, unlike the earliest devices, use extensive
electronic design automation and automated
logic synthesis to
lay out the transistors, enabling higher levels of complexity in the resulting logic functionality. Certain high-performance logic blocks, like the SRAM (
static random-access memory) cell, are still designed by hand to ensure the highest efficiency. == Structured design ==