Aluminium gallium indium phosphide

AlGaInP is typically grown by heteroepitaxy on gallium arsenide or gallium phosphide substrates in order to form a quantum well structure that can be fabricated into different devices. ==Properties==

The direct bandgap of AlGaInP encompasses the energy range of visible light (1.7 eV - 3.1 eV). By selecting a specific composition of AlGaInP, the bandgap can be selected to correspond to the energy of a specific wavelength of visible light. For instance, this can be used to obtain LEDs that emit red, orange, or yellow light. ==Applications==

AlGaInP is used as the active material in: • Light emitting diodes of high brightness • Diode lasers • Quantum well structures • Solar cells (potential). The use of aluminium gallium indium phosphide with high aluminium content, in a five junction structure, can lead to solar cells with maximum theoretical efficiencies above 40%. The primary applications of AlGaInP diode lasers are in optical disc readers, laser pointers, and gas sensors, as well as for optical pumping, and machining. ==Safety and toxicity aspects==

The toxicology of AlGaInP has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium indium gallium phosphide sources (such as trimethylgallium, trimethylindium and phosphine) and industrial hygiene monitoring studies of standard MOVPE sources have been reported in a review. ==See also==