A
piezoelectric nanogenerator is an
energy-harvesting device capable of converting external kinetic energy into electrical energy via action by a nano-structured
piezoelectric material. It is generally used to indicate kinetic energy harvesting devices utilizing nano-scaled piezoelectric material, like in
thin-film bulk acoustic resonators.
Mechanism The working principle of the nanogenerator will be explained in two different cases: the force exerted perpendicular to and parallel to the axis of the
nanowire. When a piezoelectric structure is subjected to the external force of the moving tip, deformation occurs throughout the structure. The piezoelectric effect will create an
electrical field inside the
nanostructure; the stretched part with the positive strain will exhibit positive electrical potential, whereas the compressed part with negative strain will show the negative electrical potential. This is due to the relative displacement of
cations with respect to
anions in their crystalline structure. As a result, the tip of the nanowire will have an electrical potential distribution on its surface, while the bottom of the nanowire is neutralized since it is grounded. The maximum voltage generated in the nanowire can be calculated using the following equation: V_{\text{max}} = \pm \frac{3}{4(\kappa_0+\kappa)}[e_{\text{33}} - 2(1 + \nu) e_{\text{15}} - 2\nu e_{\text{31}}] \frac{a^3}{l^3} \nu_{\text{max}} , where
κ0 is the permittivity in vacuum,
κ is the dielectric constant,
e33,
e15, and
e31 are the piezoelectric coefficients,
ν is the Poisson ratio,
a is the radius of the nanowire,
l is the length of the nanowire, and
νmax is the maximum deflection of the nanowire's tip. The
Schottky contact must be formed between the counter electrode and the tip of the nanowire since the
ohmic contact will neutralize the electrical field generated at the tip. ZnO nanowire with an
electron affinity of 4.5 eV,
Pt (
φ = 6.1 eV), is a metal sometimes used to construct the Schottky contact. By constructing the Schottky contact, the electrons will pass to the counter electrode from the surface of the tip when the counter electrode is in contact with the regions of the negative potential, whereas no current will be generated when it is in contact with the regions of the positive potential, in the case of the
n-type semiconductive nanostructure (the
p-type semiconductive structure will exhibit the reversed phenomenon since the hole is mobile in this case). For the second case, a model with a vertically grown nanowire stacked between the
ohmic contact at its bottom and the Schottky contact at its top is considered. When the force is applied toward the tip of the nanowire, the uniaxial compressive force is generated in the nanowire. Due to the piezoelectric effect, the tip of the
nanowire will have a negative piezoelectric potential, increasing the
Fermi level at the tip. Since the electrons will then flow from the tip to the bottom through the external circuit, positive electrical potential will be generated at the tip. The Schottky contact will stop electrons from being transported through the interface, therefore maintaining the potential at the tip. As the force is removed, the piezoelectric effect diminishes, and the electrons will be flowing back to the top in order to neutralize the positive potential at the tip. The second case will generate an alternating-current output signal.
Geometrical configuration Depending on the configuration of the piezoelectric nanostructure, the nanogenerator can be categorized into 3 types: VING, LING, and NEG.
Vertical nanowire Integrated Nanogenerator (VING) VING is a 3-dimensional configuration consisting of a stack of 3 layers, which are the base electrode, the vertically grown piezoelectric nanostructure, and the counter electrode. The piezoelectric nanostructure is usually grown on the base electrode, which is then integrated with the counter electrode in full or partial mechanical contact with its tip. The first VING was developed in 2007 with a counter electrode with the periodic surface grating resembling the arrays of the AFM tip as a moving electrode. Since the counter electrode is not in full contact with the tips of the piezoelectric nanowire, its motion in-plane or out-of-plane caused by the external vibration induces the deformation of the piezoelectric nanostructure, leading to the generation of the electrical potential distribution inside each individual nanowire. The counter electrode is coated with metal, forming a Schottky contact with the tip of the nanowire. Zhong Lin Wang's group has generated counter electrodes composed of ZnO nanorods. Sang-Woo Kim's group at
Sungkyunkwan University (SKKU) and Jae-Young Choi's group at
Samsung Advanced Institute of Technology (SAIT) introduced a bowl-shaped transparent counter electrode by combining
anodized aluminum and
electroplating technology. They have also developed the other type of counter electrode by using networked single-walled carbon nanotube (
SWNT).
Lateral nanowire Integrated Nanogenerator (LING) LING is a 2-dimensional configuration consisting of three parts: the base electrode, the laterally grown piezoelectric nanostructure, and the metal electrode for schottky contact. In most cases, the thickness of the substrate film is thicker than the diameter of the piezoelectric nanostructure. LING is an expansion of the single wire generator (SWG).
Nanocomposite Electrical Generators (NEG) NEG is a 3-dimensional configuration consisting of three main parts: the metal plate electrodes, the vertically grown piezoelectric nanostructure, and the polymer matrix, which fills in between the piezoelectric nanostructure. NEG was introduced by Momeni et al. A fabric-like geometrical configuration has been suggested where a piezoelectric nanowire is grown vertically on the two microfibers in their radial direction, and they are twined to form a nanogenerator. One of the microfibers is coated with the metal to form a Schottky contact, serving as the counter electrode for VINGs.
Materials Among the various piezoelectric materials studied for the nanogenerator, much of the research has focused on materials with a
wurtzite structure, such as
ZnO,
CdS and
GaN. Zhong Lin Wang of the Georgia Institute of Technology introduced p-type ZnO nanowires. Unlike the n-type semiconductive nanostructure, the mobile particle in the p-type is a hole, thus, the schottky behavior is reversed from that of the n-type case; the electrical signal is generated from the portion of the nanostructure where the holes are accumulated. From the idea that the material with a
perovskite structure is known to have more effective piezoelectric characteristics compared to that with a wurtzite structure,
barium titanate nanowire has also been studied by Min-Feng Yu of the
University of Illinois at Urbana-Champaign. The output signal was found to be more than 16 times that of a similar
ZnO nanowire. Liwei Lin of the
University of California, Berkeley, has suggested that
PVDF can also be applied to form a nanogenerator. A comparison of the reported materials as of 2010 is given in the following table:
Applications In 2010, the Zhong Lin Wang group developed a self-powered pH or UV sensor integrated with VING with an output voltage of 20–40mV on the sensor. Zhong Lin Wang's group has also generated an
alternating current voltage of up to 100mV from the flexible SWG attached to a
device for running hamster. Some of the
piezoelectric nanostructure can be formed on various kinds of substrates, such as transparent organic substrates. The research groups in SKKU (Sang-Woo Kim's group) and SAIT (Jae-Young Choi's group) have developed a transparent and flexible nanogenerator. Their research substituted an
indium-tin-oxide (ITO) electrode with a
graphene layer. ==Triboelectric nanogenerator==