Referring to the cross-sectional view of a conventional monolithic active pixel sensor, the following layers are discernible, commencing from the bottom: • a highly
doped (p++) silicon substrate, serving as a mechanical support. • a thin (several tens of micrometers, typically high-resistivity)
p-type epitaxial layer, utilized as the sensitive volume. •
n-type and
p-type implants on top of the epitaxial layer. • metal layers employed for signal routing. N-type implants in contact with p-type epitaxial layer form
p–n junctions that function as diodes for collecting current induced by the passage of an ionizing particle, while
p-wells host the
CMOS circuitry. A small voltage is applied to the diode, resulting in a depleted region. By applying a negative (reverse) bias voltage to the diode through the substrate, the depleted region can be further increased. Depending on the epitaxial layer thickness and
resistivity, n-type implant doping, and bias applied, the epitaxial layer can be partially or fully
depleted. Electrons originating from the epitaxial layer are confined within this region due to the disparity in doping levels, which imposes a potential barrier. Subsequently, these electrons
diffuse thermally within the epitaxial layer until they encounter a depleted region, where, under the influence of the electric field, they drift towards the collection diode. Electrons generated within the p-wells or the substrate, which diffuse into the epitaxial layer, undergo the same process. Signal formation in MAPS depends on the
junction capacitance of the collection diode and the input capacitance of the in-pixel readout circuit. A charge collection discharges the
capacitance thus causing a voltage drop {{tmath|1= \textstyle \Delta V = \frac{Q}{C} }}, where
Q is the amount of collected charge and
C the total capacitance. To optimize the
signal-to-noise ratio, the collection diode tends to be as small as possible to decrease the junction capacitance. To enhance readout speed and decrease data throughput, MAPS readout circuitry typically incorporates in-pixel amplification and discrimination. This approach retains only the information about the particle's hit position, effectively discarding the energy (charge) information. For instance, the ALPIDE chip, featuring 1024 × 512 pixel matrix with hit/no-hit readout, was designed to operate at 100 kHz readout rate. == High-energy physics applications ==