In 1966, Tolbanov was a member of the avant-garde brigade of the Tomsk student construction team participated in clearing the site for construction of the capital of oil industry, the city of
Strezhevoy (Tomsk region). • From 1970 to 1974 Oleg P. Tolbanov worked at the Research Institute of Semiconductor Devices (Tomsk), rising from an engineer to a leading designer. • From 1975 to the present time Oleg P. Tolbanov works at
Tomsk State University. Under his leadership, the Scientific school and Laboratory of Functional Electronics were established, in which work is carried out related to the study of patterns, development of semiconductor doping technology with impurities with deep energy levels and building of structures and devices based on it. • In 2016, thanks to the developed detectors, they entered the
ATLAS experiment group, which is searching for super-heavy elementary particles, such as the
Higgs Boson, at the European Center for Nuclear Research (
CERN). Previously unknown scientific facts were discovered: – marginal compensation of
GaAs with chromium impurity, which makes it possible to achieve a specific resistance of more than 1 GΩ * cm (higher than in its own semiconductor); – corrugation of the energy bands, leading to formation of recombination barriers, allowing a more than 100-fold increase in the lifetime of charge carriers in a compensated semiconductor. Tolbanov is the head of Laboratory of Functional Electronics at Institute of Smart Materials and Technology. == Personal life ==