• Response of advanced bipolar processes to ionizing radiation EW Enlow, RL Pease, W Combs, RD Schrimpf, RN Nowlin Nuclear Science, IEEE Transactions on 38 (6), 1342-1351. • Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber Jr, M DeLaus, PS ... Nuclear Science, IEEE Transactions on 41 (6), 1871-1883. • Charge collection and charge sharing in a 130 nm CMOS technology OA Amusan, AF Witulski, LW Massengill, BL Bhuva, PR Fleming, ML Alles, AL ... Nuclear Science, IEEE Transactions on 53 (6), 3253-3258. • Physical model for enhanced interface-trap formation at low dose rates SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, A Michez, ST ... Nuclear Science, IEEE Transactions on 49 (6), 2650-2655. • Defect Generation by Hydrogen at the Si-SiO2 Interface SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 87 (16), 165506. • Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides DM Fleetwood, LC Riewe, JR Schwank, SC Witczak, RD Schrimpf Nuclear Science, IEEE Transactions on 43 (6), 2537-2546. • Trends in the total-dose response of modern bipolar transistors RN Nowlin, EW Enlow, RD Schrimpf, WE Combs Nuclear Science, IEEE Transactions on 39 (6), 2026-2035. • Analysis of single-event transients in analog circuits P Adell, RD Schrimpf, HJ Barnaby, R Marec, C Chatry, P Calvel, C Barillot, O ... Nuclear Science, IEEE Transactions on 47 (6), 2616-2623. • Single event transient pulse widths in digital microcircuits MJ Gadlage, RD Schrimpf, JM Benedetto, PH Eaton, DG Mavis, M Sibley, K Avery ... Nuclear Science, IEEE Transactions on 51 (6), 3285-3290. • Reactions of hydrogen with Si-SiO2 interfaces ST Pantelides, SN Rashkeev, R Buczko, DM Fleetwood, RD Schrimpf Nuclear Science, IEEE transactions on 47 (6), 2262-2268. ==References==