Soitec

Soitec was founded in 1992 near Grenoble in France by two researchers from CEA Leti, an institute for micro- and nanotechnologies research created by the French Commission for Atomic Energy and Alternative Energies (CEA). The pair developed Smart Cut™ technology to industrialize Silicon-On-Insulator (SOI) wafers, and built their first production unit in Bernin, in the Isère department of France. Soitec's offering initially targeted the electronics market. At the end of the 2000s, Soitec launched into the solar energy and lighting markets, exploiting new openings for its materials and technologies. In 2010, the company filed 250 patents in France, as well as in the United States, China, and several Asian countries. • 2015: Peregrine Semiconductor and GlobalFoundries announce in July the first 300mm RF-SOI platform (130 nm). • 2015: GlobalFoundries announces in July the implementation of a technological platform for producing 22-nm FD-SOI chips (22FDX). • 2015: Soitec and Simgui announce the first Chinese production of 200mm SOI wafers. • 2015: CEA Leti demos MEMS on 300mm SOI wafers. • 2016: Soitec starts volume manufacturing of 300mm RF-SOI wafers. • 2017: GlobalFoundries announces 45RFSOI. • 2017: Samsung announces 18FDS. • 2017: IBM and GlobalFoundries announce a custom FinFET-on-SOI process (14HP). • 2017: Soitec signs a five-year agreement to supply GlobalFoundries with FD-SOI wafers. • 2018: STMicroelectronics adopts GlobalFoundries' 22FDX. • 2018: Soitec and MBDA acquire the Dolphin Integration assets. • 2019: Soitec signs a high-volume agreement to supply Samsung with FD-SOI wafers. • 2019: Soitec acquires EpiGaN • 2019: Soitec signs high-volume agreements to supply GlobalFoundries with SOI wafers. • 2020: GlobalFoundries announces the 22FDX+ platform. • 2020: Soitec signs a multi-year agreement to supply GlobalFoundries with 300mm RF-SOI wafers. • 2022: start of building of the Bernin 4 facility for SiC wafers, intended to start production in 2024. ==Operations==

Historically, Soitec has marketed Silicon on Insulator (SOI) as a high performance material for manufacturing electronic chips for computers, game consoles and servers, as well as the automotive industry. With the explosion of mobile products (tablets, smartphones, etc.) on the consumer electronics market, Soitec has also developed new materials for radio-frequency components, multimedia processors, and power electronics. With the rapid growth of the Internet of Things, wearables, and other mobile devices, new needs have arisen in terms of performance and energy efficiency of electronic components. For this market, Soitec offers materials that help reduce the energy consumed by chips, improve their information processing speed, and support the needs of high-speed Internet. In the solar energy market Soitec acquired Concentrix Solar, then manufactured and supplied Concentrator Photovoltaic (CPV) systems from 2009 to 2015. Research to create a new generation of four-junction solar cells led Soitec to set a world record in December 2014 with a cell capable of converting 46% of solar rays into electricity. Soitec announced in January 2015 that it would be leaving the solar market after several important solar plant projects ended. In the lighting industry, Soitec operates upstream and downstream of the LED value chain. Upstream, the company uses its expertise in semiconductor materials to develop substrates made from gallium nitride (GaN), the base material used in LEDs. Downstream, Soitec is developing a range of industrial partnerships to commercialize new professional lighting solutions (urban, office and transport infrastructure lighting). == Technologies ==

Soitec is developing numerous technologies for its different sectors of activity. Smart Cut™ Developed by CEA-Leti in collaboration with Soitec, this technology has been patented by researcher Michel Bruel. It makes possible the transfer of a thin layer of monocristalline material from a donor substrate to another by combining ion implantation and bonding by molecular adhesion. Soitec uses Smart Cut™ technology to mass-produce SOI wafers. Compared with classic bulk silicon, SOI enables a significant reduction in energy leakage in the substrate, and improves the performance of the circuit in which it is used. Smart Stacking™ The technology involves the transfer of partially or fully processed wafers onto other wafers. It can be adapted to wafer diameters of 150 mm to 300 mm and is compatible with a wide variety of substrates, such as silicon, glass and sapphire. Smart Stacking™ technology is used for back-side illuminated image sensors, where it improves sensitivity and enables a smaller pixel size, as well as in smartphone radio-frequency circuits. It also opens new doors to 3D integration. Epitaxy Soitec has epitaxy expertise in III-IV materials across the following fields: molecular beam epitaxy, metal organic vapor phase epitaxy and hydride vapor phase epitaxy. The company manufactures wafers of gallium arsenide (GaAs) and gallium nitride (GaN) for developing and manufacturing compound semiconductor systems. These materials are used in Wi-Fi and high-frequency electronic devices (mobile telecommunications, infrastructure networks, satellite communications, fiber optic networks and radar detection), as well as in energy management and optoelectronic systems, such as LEDs. ==Capital increases==

Soitec has carried out three capital increases: • The first in July 2011 to finance investments, especially for developing its solar energy and LED businesses. • The second in July 2013 to contribute to the refinancing of bonds convertible and/or exchangeable into new or existing shares (“OCEANEs”) due in 2014 and strengthen the company's financial structure. In addition, Soitec opened a further bond issue in September 2013. • The third in June 2014 to strengthen Soitec's financial profile and its cash position and support the FD-SOI substrates industrial mass production. ==References==