Career
In his tenure at NIT Silchar, he has held prominent administrative positions, including the Dean of Academics, Dean of Research & Consultancy, and the Head of the department. ==Selected bibliography==
Selected bibliography
Selected articles • S. Baishya, A. Mallik, and C. K. Sarkar, “A Threshold Voltage Model for Short-Channel MOSFETs Taking into Account the Varying Depth of Channel Depletion Layers Around the Source and Drain,” Microelectronics Reliability, pp. 17 – 22, vol. 48, January 2008. • S. Baishya, A. Mallik, and C. K. Sarkar, “A Pseudo-two-dimensional Subthreshold Surface Potential Model for Dual-material Gate MOSFETs,” IEEE Transactions on Electron Devices, pp. 2520–2525, vol. 54, September 2007. • S. Baishya, A. Mallik, and C. K. Sarkar, “A Surface Potential Based Subthreshold Drain Current Model for Short-channel MOS Transistors,” Semiconductor Science & Technology, pp. 1066–1069, vol. 22, 2007. • S. Baishya, A. Mallik, and C. K. Sarkar, “Subthreshold Surface Potential and Drain Current Models for Short-channel Pocket-implanted MOSFETs,” Microelectronic Engineering, vol. 84, pp. 653–662, April 2007. • S. Baishya, A. Mallik, and C. K. Sarkar, “A Subthreshold Surface Potential Model for Short-channel MOSFET Taking into Account the Varying Depth of Channel Depletion Layer due to Source and Drain Junctions,” IEEE Transactions on Electron Devices, vol. 53, pp. 507–514, March 2006. ==References==