Most research conducted in the last two decades has focused on improving the performance of the two most promising compounds developed by Manlabs, ZrB2 and HfB2, though significant work has continued in characterizing the nitrides, oxides, and carbides of the group four and five elements. In comparison to carbides and nitrides, the diborides tend to have higher thermal conductivity but lower melting points, a tradeoff which gives them good thermal
shock resistance and makes them ideal for many high-temperature thermal applications. The
melting points of many UHTCs are shown in Table 1.
Structure UHTCs all exhibit strong
covalent bonding which gives them
structural stability at high temperatures. Metal
carbides are brittle due to the strong bonds that exist between carbon atoms. The largest class of carbides, including
Hf,
Zr,
Ti and
Ta carbides have high melting points due to covalent carbon networks although carbon vacancies often exist in these materials; indeed,
HfC has one of the highest melting points of any material. Nitrides such as
ZrN and HfN have similarly strong covalent bonds but their refractory nature makes them especially difficult to synthesize and process. The stoichiometric nitrogen content can be varied in these complexes based on the synthetic technique utilized; different nitrogen content will give different properties to the material, such as how if x exceeds 1.2 in ZrNx, a new optically transparent and electrically insulating phase appears to form. Ceramic borides such as HfB2 and ZrB2 benefit from very strong bonding between boron atoms as well as strong metal to boron bonds; the
hexagonal close-packed structure with alternating two-dimensional boron and metal sheets give these materials high but
anisotropic strength as
single crystals. Borides exhibit high thermal conductivity (on the order of 75–105 W/mK) and low coefficients of
thermal expansion (5–7.8 × 10−6 K−1) and improved oxidation resistance in comparison to other classes of UHTCs. Thermal expansion, thermal conductivity and other data are shown in Table 2. The crystal structures,
lattice parameters, densities, and melting points of different UHTCs are shown in Table 1.
Thermodynamic properties In comparison with carbide and nitride-based ceramics, diboride-based UHTCs exhibit higher thermal conductivity (refer to Table 2, where we can see that hafnium diboride has thermal conductivity of 105, 75, 70 W/m*K at different temperature while
hafnium carbide and nitride have values only around 20W/m*K). Thermal shock resistance of HfB2 and ZrB2 was investigated by ManLabs and it was found that these materials did not fail at
thermal gradients sufficient for the failure of SiC; indeed, it was found that hollow cylinders could not be cracked by an applied radial thermal gradient without first being notched on the inner surface. UHTCs generally exhibit
thermal expansion coefficients in the range of 5.9–8.3 × 10−6 K−1.The structural and thermal stability of ZrB2 and HfB2 UHTCs results from the occupancy of bonding and antibonding levels in hexagonal MB2 structures with alternating hexagonal sheets of metal and boride atoms. In such structures, the principal frontier electronic states are bonding and
antibonding orbitals resulting from bonding between boron 2p orbitals and metal d orbitals; before group (IV), the number of available electrons in a unit cell is insufficient to fill all bonding orbitals, and beyond it they begin to fill the antibonding orbitals. Both effects reduce the overall
bonding strength in the
unit cell and therefore the enthalpy of formation and melting point. Experimental evidence shows that as one moves across the transition metal series in a given period, the enthalpy of formation of MB2 ceramics increases and peaks at Ti, Zr, and Hf before decaying as the metal gets heavier. As a result, the enthalpies of formation of several important UHTCs are as follows:
HfB2 >
TiB2 >
ZrB2 >
TaB2 >
NbB2 > VB2. It is extremely important that UHTCs are able to retain high bending strength and hardness at high temperatures (above 2000 °C). UHTCs generally exhibit hardness above 20 GPa due to the strong covalent bonds present in these materials. However, the different methods of processing UHTCs can lead to great variation in hardness values. UHTCs exhibit high flexural strengths of > 200 MPa at 1,800 °C, and UHTCs with fine-grained particles exhibit higher flexural strengths than UHTCs with coarse grains. It has been shown that diboride ceramics synthesized as a composite with silicon carbide (SiC) exhibit increased fracture toughness (increase of 20% to 4.33 MPam1/2) relative to the pure diborides. This is due to material
densification and a reduction in grain size upon processing. Table. 3 Flexural strength, hardness, and Young's Modulus at given temperatures for selected UHTCs. The UHTC composites show higher mechanical properties like Tensile strength, Young's modulus, hardness, flexural strength, and fracture toughness at high temperatures as compared to monolithic UHTCs. The high sintering temperature and pressure result in high residual stress in the composites, which can be released at high temperatures. Therefore, the mechanical properties increase with the increase in temperature. At 1,200 °C, the flexural strength of SiC is 170 MPa vs SiC-ZrC (10 wt%) is 350 MPa.
Chemical properties While UHTCs have desirable thermal and mechanical properties, they are susceptible to oxidation at their elevated
operating temperatures. The metal component oxidizes to a gas such as CO2 or NO2, which is rapidly lost at the elevated temperatures UHTCs are most useful at; boron, for example, readily oxidizes to
B2O3 which becomes a liquid at 490 °C and vaporizes very rapidly above 1,100 °C; in addition, their
brittleness makes them poor engineering materials. Current research targets increasing their
toughness and oxidation resistance by exploring composites with
silicon carbide, the incorporation of fibers, and the addition of rare-earth hexaborides such as
lanthanum hexaboride (LaB6). It has been found that the oxidative resistance of HfB2 and ZrB2 are greatly enhanced through the inclusion of 30% weight silicon carbide due to the formation of a protective glassy surface layer upon the application of temperatures in excess of 1,000 °C composed of SiO2. To determine the effect of SiC content on diboride oxidation, ManLabs conducted a series of furnace oxidation experiments, in which the oxidation scale thickness as a function of temperature for pure HfB2, SiC and HfB2 20 v% SiC were compared. At temperatures greater than 2,100 K the oxide scale thickness on pure HfB2 is thinner than that on pure SiC, and HfB2/20% SiC has the best oxidation resistance. Extreme heat treatment leads to greater oxidation resistance as well as improved mechanical properties such as fracture resistance. == Synthesis of diboride (Zr, Hf, Ti) UHTCs ==