The
MOSFET was invented at Bell Labs between 1955 and 1960. The V-groove construction was pioneered by
Jun-ichi Nishizawa in 1969, initially for the
static induction transistor (SIT), a type of junction
field-effect transistor (
JFET). The VMOS was invented by
Hitachi in 1969, when they introduced the first vertical
power MOSFET in Japan.
T. J. Rodgers, while he was a student at
Stanford University, filed a
US patent for a VMOS in 1973.
Siliconix commercially introduced a VMOS in 1975. In 1978,
American Microsystems (AMI) released the S2811. It was the first
integrated circuit chip specifically designed as a
digital signal processor (DSP), and was fabricated using VMOS, a technology that had previously not been mass-produced. ==References==