Any semiconductor
diode has an exponential
current–voltage characteristic that can be viewed as having a "
knee" voltage, sometimes used as an imprecise voltage reference. Datasheets may list a forward voltage drop at a specified "on" current. This voltage is around 0.3 V for
germanium diodes, around 0.6 V to 0.7 V for
silicon diodes, and
from 1.6 V (red) to 4 V (violet) for visible
light emitting diodes. These devices have a strong temperature dependence, which may make them useful for temperature measurement or for compensating
bias in analog circuits.
Zener diodes are also frequently used to provide a reference voltage of moderate stability and accuracy, useful for many electronic devices. An
avalanche diode displays a similar stable voltage over a range of current. The most stable diodes of this type are made by temperature-compensating a Zener diode by placing it in series with a forward diode; such diodes are made as two-terminal devices, e.g. the 1N821 series having an overall voltage drop of 6.2 V at 7.5 mA, but are also sometimes included in integrated circuits. The most common voltage reference circuit used in integrated circuits is the
bandgap voltage reference. A
bandgap-based reference (commonly just called a 'bandgap') uses analog circuits to add a multiple of the voltage difference between two bipolar junctions biased at different current densities to the voltage developed across a diode. The diode voltage has a negative temperature coefficient (i.e. it decreases with increasing temperature), and the junction voltage difference has a positive temperature coefficient. When added in the proportion required to make these coefficients cancel out, the resultant constant value is a voltage equal to the bandgap voltage of the semiconductor. In
silicon, this is approximately 1.25 V.
Buried-Zener references can provide even lower noise levels, but require higher operating voltages that are not available in many battery-operated devices. == Gas filled devices ==