Luminescent material s. Zinc sulfide, with addition of a few
ppm of a suitable
activator, exhibits strong
phosphorescence. The phenomenon was described by
Nikola Tesla in 1893, and is currently used in many applications, from
cathode-ray tubes through
X-ray screens to
glow in the dark products. When
silver is used as activator, the resulting color is bright blue, with maximum at 450
nanometers. Using
manganese yields an orange-red color at around 590 nanometers.
Copper gives a longer glow, and it has the familiar greenish glow-in-the-dark. Copper-doped zinc sulfide ("ZnS plus Cu") is used also in
electroluminescent panels. It also exhibits
phosphorescence due to impurities on illumination with blue or
ultraviolet light.
Optical material Zinc sulfide is also used as an
infrared optical material, transmitting from visible
wavelengths to just over 12
micrometers. It can be used planar as an
optical window or shaped into a
lens. It is made as
microcrystalline sheets by the synthesis from
hydrogen sulfide gas and zinc vapour, and this is sold as
FLIR-grade (Forward Looking Infrared), where the zinc sulfide is in a milky-yellow, opaque form. This material when
hot isostatically pressed (HIPed) can be converted to a water-clear form known as
Cleartran (trademark). Early commercial forms were marketed as
Irtran-2 but this designation is now obsolete.
Pigment Zinc sulfide is a common
pigment, sometimes called sachtolith. When combined with barium sulfate, zinc sulfide forms
lithopone.
Catalyst Fine ZnS powder is an efficient
photocatalyst, which produces hydrogen gas from water upon illumination. Sulfur vacancies can be introduced in ZnS during its synthesis; this gradually turns the white-yellowish ZnS into a brown powder, and boosts the photocatalytic activity through enhanced light absorption.
Semiconductor properties Both sphalerite and wurtzite are intrinsic, wide-
bandgap semiconductors. These are prototypical
II-VI semiconductors, and they adopt structures related to many of the other semiconductors, such as
gallium arsenide. The cubic form of ZnS has a
band gap of about 3.54
electron volts at 300
kelvins, but the hexagonal form has a band gap of about 3.91 electron volts. ZnS can be
doped as either an
n-type semiconductor or a
p-type semiconductor. ==History==