There are several ways in which crystalline materials can be engineered to increase their yield strength. By altering dislocation density, impurity levels, grain size (in crystalline materials), the yield strength of the material can be fine-tuned. This occurs typically by introducing defects such as impurities dislocations in the material. To move this defect (plastically deforming or yielding the material), a larger stress must be applied. This thus causes a higher yield stress in the material. While many material properties depend only on the composition of the bulk material, yield strength is extremely sensitive to the materials processing as well. These mechanisms for crystalline materials include •
Work hardening •
Solid solution strengthening •
Precipitation strengthening •
Grain boundary strengthening Work hardening Where deforming the material will introduce
dislocations, which increases their density in the material. This increases the yield strength of the material since now more stress must be applied to move these dislocations through a crystal lattice. Dislocations can also interact with each other, becoming entangled. The governing formula for this mechanism is: \Delta\sigma_y = Gb \sqrt{\rho} where \sigma_y is the yield stress, G is the
shear modulus, b is the magnitude of the
Burgers vector, and \rho is the dislocation density.
Solid solution strengthening By
alloying the material, impurity atoms in low concentrations will occupy a lattice position directly below a dislocation, such as directly below an extra half plane defect. This relieves a tensile strain directly below the dislocation by filling that empty lattice space with the impurity atom. The relationship of this mechanism goes as: : \Delta\tau = Gb\sqrt{C_s}\epsilon^\frac{3}{2} where \tau is the
shear stress, related to the yield stress, G and b are the same as in the above example, C_s is the concentration of solute and \epsilon is the strain induced in the lattice due to adding the impurity.
Particle/precipitate strengthening Where the presence of a secondary phase will increase yield strength by blocking the motion of dislocations within the crystal. A line defect that, while moving through the matrix, will be forced against a small particle or precipitate of the material. Dislocations can move through this particle either by shearing the particle or by a process known as bowing or ringing, in which a new ring of dislocations is created around the particle. The shearing formula goes as: : \Delta\tau = \frac{r_\text{particle}}{l_\text{interparticle}} \gamma_\text{particle-matrix} and the bowing/ringing formula: : \Delta\tau = \frac{Gb}{l_\text{interparticle} - 2r_\text{particle}} In these formulas, r_\text{particle}\, is the particle radius, \gamma_\text{particle-matrix}\, is the surface tension between the matrix and the particle, l_\text{interparticle}\, is the distance between the particles.
Grain boundary strengthening Where a buildup of dislocations at a grain boundary causes a repulsive force between dislocations. As grain size decreases, the surface area to volume ratio of the grain increases, allowing more buildup of dislocations at the grain edge. Since it requires much energy to move dislocations to another grain, these dislocations build up along the boundary, and increase the yield stress of the material. Also known as Hall-Petch strengthening, this type of strengthening is governed by the formula: : \sigma_y = \sigma_0 + kd^{-\frac{1}{2}}\, where : \sigma_0 is the stress required to move dislocations, : k is a material constant, and : d is the grain size. ==Theoretical yield strength==